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74AUP2G STP6N50 2SK2914 049TRU ML63P238 T7201835 PT8A990A ERB43
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  Datasheet File OCR Text:
 50 -10V 40 -5V -6V -4.5V
30 Vds=-5V 25 20
-Id (A)
-Id(A)
30
15 10
125C
20 Vgs=-4V 10 5 0 0 1 2 3 4 5 2 2.5 3 3.5 4 4.5 5 -Vds (Volts) Fig 1: On-Region Characteristics 12 1.6 -Vgs(Volts) Figure 2: Transfer Characteristics 25C
0
Normalized On-Resistance
Vgs=-6V 10
Id=-15A Vgs=-10V 1.4 Vgs=-20V 1.2
Rds(on) (m:)
8
Vgs=-10V
6 Vgs=-20V 4 0 5 10 15 20 25 30 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
1
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
24 Id=-15A
-15 1.0E+01 -12.8
1.0E+00 1.0E-01 125C
20
Rds(on) (m:)
-Is (A)
125C
16
1.0E-02 1.0E-03 1.0E-04
12
8
25C 25C 1.0E-05 1.0E-06 4 8 12 16 20 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics
4 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
10 Vds=-15V Id=-15A 8
7000 6000 Ciss
6
Capacitance (pF)
5000 4000 3000 2000 1000 Crss Coss
-Vgs (Volts)
4
2
0 0 10 40 50 60 70 -Qg (nC) Figure 7: Gate-Charge Characteristics 20 30 80
0 0 15 20 25 -Vds (Volts) Figure 8: Capacitance Characteristics 5 10 30
100.0 Rds(on) limited 100Ps 1ms 10ms 0.1s 1.0 1s 10s Tj(max)=150C Ta=25C 0.1 0.1 1 10 100 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=40C/W 1 DC 10Ps
40 Tj(max)=150C Ta=25C 30
-Id (Amps)
Power (W)
10.0
20
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-15
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
-12.8
ZTja Normalized Transient Thermal Resistance
Pd Ton T Single Pulse
0.1
0.01 0.00001
0.0001
0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000


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